2N2849-1

Hersteller :

General Semiconductor

Produktkategorie :

Transistoren - Bipolar (BJT) - Einzel

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 1V

Frequency - Transition :

30MHz

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-205AA, TO-5-3 Metal Can

Power - Max :

6.7 W

Product Status :

Active

Supplier Device Package :

TO-5

Transistor Type :

-

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

80 V