2N2018

Hersteller :

General Semiconductor

Produktkategorie :

Transistoren - Bipolar (BJT) - Einzel

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA, 10V

Frequency - Transition :

2MHz

Mounting Type :

Stud Mount

Operating Temperature :

-

Package / Case :

TO-111-4, Stud

Power - Max :

20 W

Product Status :

Active

Supplier Device Package :

TO-111

Transistor Type :

-

Vce Saturation (Max) @ Ib, Ic :

6V @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

125 V