2N1016D

Hersteller :

Microsemi Corporation

Produktkategorie :

Transistoren - Bipolar (BJT) - Einzel

Current - Collector (Ic) (Max) :

7.5 A

Current - Collector Cutoff (Max) :

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

6 @ 7.5A, 4V

Frequency - Transition :

-

Mounting Type :

-

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

-

Power - Max :

150 W

Product Status :

Active

Supplier Device Package :

TO-82

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 1A, 5A

Voltage - Collector Emitter Breakdown (Max) :

200 V