SSM6N7002BFE,LM

Hersteller :

Toshiba Semiconductor and Storage

Produktkategorie :

Transistoren - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

200mA

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

17pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.1Ohm @ 500mA, 10V

Supplier Device Package :

ES6

Vgs(th) (Max) @ Id :

3.1V @ 250µA