G2K3N10L6

Hersteller :

Goford Semiconductor

Produktkategorie :

Transistoren - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

536pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

1.67W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

220mOhm @ 2A, 10V

Supplier Device Package :

SOT-23-6L

Vgs(th) (Max) @ Id :

2.2V @ 250µA