G200P04S2

Hersteller :

Goford Semiconductor

Produktkategorie :

Transistoren - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2365pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

2.1W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

20mOhm @ 7A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 250µA