UJ4C075023K3S

Hersteller :

UnitedSiC

Produktkategorie :

Transistoren - FETs, MOSFETs - Einzel

Current - Continuous Drain (Id) @ 25°C :

66A (Tc)

Drain to Source Voltage (Vdss) :

750 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

37.8 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C

Package / Case :

TO-247-3

Power Dissipation (Max) :

306W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

29mOhm @ 40A, 12V

Supplier Device Package :

TO-247-3

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

6V @ 10mA