G2002A

Hersteller :

Goford Semiconductor

Produktkategorie :

Transistoren - FETs, MOSFETs - Einzel

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

733 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power Dissipation (Max) :

2.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

540mOhm @ 1A, 10V

Supplier Device Package :

SOT-23-6L

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA